Click on the "mesh" button to mesh the simulation. The doping concentration of the source and drain regions can be visualized as shown below. Next, diffusion doping regions are used to specify the dopant concentrations in the source and drain region and the region underneath the gate. This is accomplished by defining a region of constant doping that encompasses the entire geometry.
To define the space-charge regions in the silicon, first, the background doping concentration of the silicon is set to represent a p-type epitaxial layer with a concentration of 1x10 15 cm -3.A 2 um silicon layer is grown on a thick silicon dioxide (oxide) layer.Notice that the MOSFET is specified as follows:
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